Magnetic sensor utilizing magnetization reset for sense axis selection

ABSTRACT

In one general aspect, a system includes a material including a surface, and a magnetic sensor configured to sense a first component and a second component of a magnetic field. The first component of the magnetic field may be orthogonal to the second component of the magnetic field. The magnetic sensor may include a first sense element included on a first angled surface sloping in a first direction relative to the surface of the material, a second sense element included on a second angled surface sloping in the first direction, and a third angled surface sloping in a second direction different from the first direction where the third angled surface can be disposed between the first angled surface and the second angled surface and can exclude a sense element.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.14/218,771, filed Mar. 18, 2014, which claims the benefit of priorityunder 35 U.S.C. § 119(e) of U.S. Provisional Patent Application No.61/793,367, titled “MAGNETIC SENSOR UTILIZING MAGNETIZATION RESET FORSENSE AXIS SELECTION,” filed on Mar. 15, 2013, both of which areincorporated by reference herein in their entireties.

BACKGROUND

Magnetoresistance refers to property of a material to change itsresistivity in the presence of a magnetic field. Magnetic sensors canutilize magnetoresistance to sense various components of magneticfields. For example, magnetic sensor units can be arranged to sense acomponent of a magnetic fields in specific directions.

For example, U.S. Pat. No. 7,126,330 describes a three-dimensionalmagnetic sensing device configured to sense three mutually orthogonalcomponents of a magnetic field using three separate sensor units,including first and second magnetic sensor units formed on a commonplane on a single substrate to sense x- and y-axis components and athird magnetic sensor formed on a sloped surface with respect to thecommon plane to sense a z-axis component.

SUMMARY

In one general aspect, a system includes a material including a surface,and a magnetic sensor configured to sense a first component and a secondcomponent of a magnetic field. The first component of the magnetic fieldmay be orthogonal to the second component of the magnetic field. Themagnetic sensor may include a first sense element included on a firstangled surface sloping in a first direction relative to the surface ofthe material, a second sense element included on a second angled surfacesloping in the first direction, and a third angled surface sloping in asecond direction different from the first direction where the thirdangled surface can be disposed between the first angled surface and thesecond angled surface and can exclude a sense element.

In another general aspect, a system includes a magnetic sensorconfigured to sense a first component and a second component of amagnetic field. The first component of the magnetic field may beorthogonal to the second component of the magnetic field. The magneticsensor may include a plurality of sense elements, and a plurality ofangled surfaces. A number of the plurality of sense elements can be lessthan a number of the plurality of angled surfaces.

In another general aspect, a system includes a material including asurface, and a magnetic sensor configured to sense a first component anda second component of a magnetic field. The first component of themagnetic field may be orthogonal to the second component of the magneticfield. The magnetic sensor may include a first sense element, and asecond sense element. The first sense element of the magnetic sensor andthe second sense element of the magnetic sensor can each be included onalternating angled surfaces that are each sloped with respect to thesurface of the material.

This overview is intended to provide an overview of subject matter ofthe present patent application. It is not intended to provide anexclusive or exhaustive explanation of example embodiments. The detaileddescription is included to provide further information about the presentpatent application.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, which are not necessarily drawn to scale, like numeralsmay describe similar components in different views. Like numerals havingdifferent letter suffixes may represent different instances of similarcomponents. The drawings illustrate generally, by way of example, butnot by way of limitation, various embodiments discussed in the presentdocument.

FIG. 1 illustrates generally an example electrical schematic of afull-Wheatstone bridge.

FIG. 2 illustrates generally a side view of a substrate having one ormore angled surfaces.

FIG. 3 illustrates generally an example top down arrangement offerromagnetic sense elements.

FIGS. 4-7 illustrate generally magnetic reconfiguration and resultantbridge output simulations for two full-Wheatstone bridges.

FIGS. 8 and 9 illustrate generally two example chip layouts.

FIG. 10 illustrates generally an example top down arrangement offerromagnetic sense elements formed on angled surfaces.

FIG. 11 illustrates generally an example chip layout.

FIG. 12 illustrates generally an example device cross section etchedinto a substrate.

FIG. 13 illustrates generally an example device cross section formedusing a dielectric deposition process.

FIGS. 14A-14C illustrate generally example in-plane responses.

DETAILED DESCRIPTION

In example implementations described herein, a magnetic sensor utilizingmagnetization reset for sense axis selection may be provided. In anexample, the magnetic sensor can comprise one or more sense elementsconfigured in a half- or full-Wheatstone bridge configuration,configured to sense, among other things, one or more components of amagnetic field in one or more specified directions. Combined, themagnetic sensor disclosed herein can include a single full-Wheatstonebridge configured to sense first and second components of a magneticfield in two orthogonal directions.

FIG. 1 illustrates generally an example electrical schematic of afull-Wheatstone bridge 100 configured to measure a change in resistivitydue, for example, to an applied magnetic field. The example of FIG. 1illustrates generally a full-Wheatstone bridge having two leg types, legtype 1 and leg type 2. Each leg can consist of a single sense element orcan include an array of sense elements.

FIG. 2 illustrates generally a side view of a substrate 200 having oneor more angled surfaces, including, for example, first, second, third,and fourth angled surfaces 101, 102, 103, 104. Each angled surface has aslope (e.g., slope type 1, slope type 2, etc.) determined, in certainexamples, using one or more etching or other processes. One or moreangled surfaces, such as one or more of those disclosed in FIG. 2, canbe used to form one or more legs of a half- or full-Wheatstone bridge.In FIG. 2, the x- and y-axes are illustrated, whereas the y-axis goesinto and out of the page.

In an example, at least two Wheatstone bridge legs can include aferromagnetic material, such as a nickel-iron alloy (NiFe), depositedover at least a portion of one or more of the angled surfaces, forexample, ˜1 to 30 um wide strips having an aspect ratio of at least 3,and 40 to 1000 angstroms (A) thick. The ferromagnetic material can bedoped to enhance anisotropic magnetoresistance (AMR) of the material orlower its magnetic moment (e.g., using copper (Cu), molybdenum (Mo), orone or more other doping). The at least two bridge legs can form ahalf-Wheatstone bridge or a portion of a full-Wheatstone bridge.

In an example, the angled surfaces can be etched with potassiumhydroxide (KOH), heated tetramethylammonium Hydroxide (TMAH),ethylenediamine pyrocatechol (EDP), or one or more similar processes toform a 54.7 degree angle from the substrate surface, etched with deepreactive-ion etching (RIE) to form a 45 degree side angle from thesubstrate surface followed by a subsequent step to create a smoothsurface. If an exposed silicon (Si) surface is produced, an oxide can begrown or deposited to isolate one or more ferromagnetic members from oneanother. Alternatively, the sloped surface can be formed from depositionof a thick dielectric material that can be etched to form horizontalbars upon the substrate and either a dielectric reflow process, angledetch, or other sidewall spacer process can be applied to produce slopedsurfaces elevated above the substrate. Sets of grooves can be formedwith orthogonal in-plane directions to one another, orienting the twohalf- or full-Wheatstone bridges 90 degrees from one another upon devicecompletion. Growth of a dielectric can be advantageous in that buriedconductive lines can be formed both underneath and above theferromagnetic material to apply fields in various orientations, forexample, along a long axis of the ferromagnetic element to reverse localmagnetization (e.g., to switch between measurement axes or to perform aset/reset measurement) or along the ferromagnetic element short axis tofunction as an electrical self test.

FIG. 3 illustrates generally an example top down arrangement 300 offirst, second, third, and fourth ferromagnetic sense elements 105, 107,108, 109 formed on angled surfaces, such as illustrated in FIG. 2. Eachsense element in FIG. 3 includes one or more bias elements, illustratedon the first sense element 105 as bias elements 106. In an example,between one and four bridge legs can be formed using the four senseelements illustrated here. Each sense element can form a separate bridgeleg, or more than one sense element can be combined to form a singlebridge leg. Accordingly, used separately, the four sense elements ofFIG. 3 can be used to form two half-Wheatstone bridges or onefull-Wheatstone bridge. Used in combination, the four sense elements ofFIG. 3 can be used to form as little as a portion of a single leg of ahalf- or full-Wheatstone bridge.

In an example, the bias elements 106 can be configured asbarber-pole-bias shunting bars formed from aluminum (Al), Cu, or one ormore other high conductivity materials deposited either above or belowthe sense elements to cause current to flow a desired angle away fromthe magnetization direction (e.g., ±45 degrees) to linearize the sensorresistance response. In an example, the bias elements can be depositedon a diffusion barrier on the sense elements.

In a Wheatstone bridge, the bias elements can be formed on differentsense elements at different angles (e.g., 90 degrees apart) so that whenmagnetization is deflected from the long axis of the sense element, oneelement increases in resistance while another element decreases inresistance. Since the two half bridges lie along a sloped surface, theycan provide response that can be related to X, Y, and Z fields in aplane. For example, a single leg formed on an angled sidewall will havea resistance response that is dependent upon pre-factors (a, b), where(a) times the X-field component plus (b) times the Z-field component(with Z field related response stronger for 100 Si etched via KOH orTMAH due to the 54.7 degree orientation). For a type 1 sense element,illustrated in the example of FIG. 3, the response can be approximatedas R1=R0(1+(aX+bZ)), where X and Z represent the field components in theX and Z directions. For other angles and orientations, the (a) and (b)factors may have different weights. A sense element lying on the samesidewall, but with a 90 degree change in the bias angle will haveR2=R0(1−(aX+bZ)). As the AMR effect has a 180 degree symmetry, the aboverelation R2=R0(1−(aX+bZ)) may also be arrived at with an identicalbarber pole bias angle and reversing the magnetization of the firstsense element via a field pulse in a proximal reset line, illustrated inFIGS. 12 and 13.

In an example, reset lines can be Al or Cu wire that either encircle orrun above or below a sense element, routed to provide a field along thelong axis of the sense element. Sense elements made of the sameferromagnetic material deposited on an opposing sidewall can producesignals such as R3=R0(1−aX+bZ) and R4=R0(1+aX−bZ), depending uponrelative alignment between current flow, barber pole bias angle, andmagnetization orientation. Therefore, the magnetic field componentdirected along a single axis can be determined by arranging a number ofsense elements in a half- or full-Wheatstone bridge configuration.

To save space and chip cost, a dynamically adjustable method can beemployed wherein a reset line is parsed to allow independent switchingof the local magnetization of sense elements of each type. In such acase, a first reading can be taken with type 1 sense elements in the R1response state and type 2 sense elements held in the R2 response state,yielding output proportional to the X-field component. Subsequently, areversal pulse can be applied to, for example, the type 2 sense elementswithin the Wheatstone bridge. Another set of readings can then be taken,but now, since the type 2 sense elements are in the R4 response state,the Wheatstone bridge output will be proportional to the Z-fieldcomponent. This reversed configuration (e.g., one sense element type inone configuration, the other along the opposing magnetization direction)can provide Z-axis output only, eliminating the need for a thirdphysical bridge or algebraic decomposition, such as required byalternative technologies. Therefore, only two bridges are required toget all three components of the field for a more efficient use of diearea. A second bridge can be oriented orthogonally in-plane and providesY and Z signals, if a second set of Z-axis signals is desired.

As illustrated in the example of FIG. 3, a single structure candetermine both Y and Z response, simply one pair of bridge legs ismagnetically reversed between states. Flipping techniques provide highlyaccurate coronal diagnostic spectrometer (CDS) measurements by measuringY1, then reversing both magnetization directions and measuring Y2. Inother examples, electrical reversal of the current flow may work aswell. Further, an orthogonal orientation can provide X and Z signals.Multiplexing between different leg electrical interconnections canprovide another route for signal enhancement, as can dithering therelative barber pole bias, side wall slope, or magnetizationorientation. For example, all barber pole bias could be the same,bridges formed on the same side wall, and then signals arise fromdiffering magnetization orientations in sense elements.

FIGS. 4-7 illustrate generally magnetic reconfiguration and resultantbridge output simulations 400, 500, 600, 700 for two full-Wheatstonebridges as described in FIG. 3 (e.g., X/Z bridge in read X, Z states andY/Z bridge in read Y, Z states).

FIGS. 8 and 9 illustrate generally two example chip layouts 800, 900 forthe configurations discussed above with respect to FIG. 3. FIG. 8includes a Y/Z sensor 110 and an X/Z sensor 111 having sense elements onsuccessive angled surfaces, illustrated as patterns slope 1 and slope 2.FIG. 9 includes first and second Y/Z sensors 110A, 110B and first andsecond X/Z sensors 111A, 111B having sense elements on alternatingangled surfaces. The sensors can be grouped together or distributedacross the chip, depending on, for example, constraints of resetrouting, etc. In an example, the X axis in FIGS. 8 and 9 include theside perimeters of the figure, while the Y axis includes the top andbottom perimeters of the figure, and the Z axis extends into and out ofthe figure.

FIG. 10 illustrates generally an example top down arrangement 1000 offirst, second, third, and fourth ferromagnetic sense elements 105, 107,108, 109 formed on angled surfaces, such as illustrated in FIG. 2. Eachsense element in FIG. 10 includes one or more bias elements, illustratedon the first sense element 105 as bias elements 106.

In contrast to that illustrated in FIG. 3, the number of reorientationsrequired between measurements can be reduced using a passive subtractionmethod. In this example, a single chip, three axis magnetic sensor isbuilt from sense elements (or arrays thereof) built on sloped sidewallsorientated at 90 degrees to one another, where each bridge gives aresponse to a fixed magnetic field component along a single axis. Thiscan be implemented by constructing a first sensor from elements of type1 and type 2 utilizing barber pole bias and magnetization combinationsto produce R1 and R3 type dependencies to pull out the X component ofthe field and a second sensor from elements of type 1 and 2, where R1and R4 type relations are used to pull out the Z component of the field.A full reversal of the magnetizations of each sense element of such abridge can produce a signal dependent upon −X or −Z field, and allowoffset subtraction through sample and hold circuitry. Another bridge canbe built in groove oriented 90 degrees to those bridges producingprevious X and Z signals, to provide response proportional to a fieldcomponent in the Y direction.

The extra information gathered from the Z signal from the second bridgecan be used to compensate for cross-axis effects and extend the linearrange (e.g., utilizing digital signal processing (DSP) on anapplication-specific integrated circuit (ASIC) chip, which can beintegrated into a magnetometer chip). Because cross-axis effects arisefrom an additional stiffening field along the long axis of the senseelement, the two bridges oriented at 90 degrees in-plane from oneanother will experience a different field along their non responsiveaxes, and this will directly impact the signal measured on the Z-axisresponse of the two bridges in the system, which will be identical inthe absence of any cross-axis field. If differing signals are measuredfrom the Z-field measurement on the first and second bridges, additionalinformation about in-plane field components can be utilized to reducethe iterative calculation otherwise required to back out the true field.The cross-axes effect can be understood as an additional spring constantthat diminishes the response of the orthogonal sense axis. An X fieldcan reduce the sensitivity of a Y sensor by about 1% Gauss, and can alsoreduce the Z response of that same sensor by about 1% when configured tomeasure a Z field. The X sensor would see the Z component unchanged, socomparison of these two values allows additional data to be taken tofurther compensate such non-linear effects.

FIG. 11 illustrates generally an example chip layout 1100 for theconfigurations discussed above with respect to FIG. 10. The chip layout1100 includes a Y sensor 110, an X sensor 111, and a Z sensor 112, eachhaving sense elements on successive angled surfaces, illustrated aspatterns slope 1 and slope 2.

Note that, in the example illustrated in FIGS. 10 and 11, no additionalsignal processing is required, as the bridges directly provide outputthat is proportional to X, Y, Z fields and aligned with the chip edgeand surface normal. For generality, each magnetic sense element may bereplaced with an array of sense elements for signal-to-noiseenhancements and connected together in either a series combination,parallel combination, or combination thereof. The bridge legs formedfrom the sense elements can be interdigitated so that the two or fourlegs, while electrically connected in blocks through the interconnectionpath, are interspersed in physical layout so as to reduce the effects ofdie stress and temperature variances on the total sensor output. This isachieved as the die level stress shifts are distributed equally acrossall bridge legs without a discrete physical block of sense elementscomprising each bridge leg separated across the chip. Each individualsense element magnetostriction induced response is averaged out in thesame manner for each of the sensor bridge legs and all legs are equallyaffected by a die level stress profiles.

FIG. 12 illustrates generally an example device cross section 1200etched into a substrate 115, including a ferromagnetic layer 116 (e.g.,a ferromagnetic sense element), an Al barber pole bias 117 (e.g., biaselement), a reset line 118, and self-test lines 119. The space betweenthe numbered layers can include a dielectric layer.

FIG. 13 illustrates generally an example device cross section 1300formed using a dielectric deposition process. The device cross section1300 includes one or more channels formed in a dielectric 120, andincludes a substrate 115, a ferromagnetic layer 116 (e.g., aferromagnetic sense element), an Al barber pole bias 117 (e.g., biaselement), a reset line 118, self-test lines 119, 122, and a reset line121. The space between the numbered layers can include a dielectriclayer. The example cross section illustrated in FIG. 13 allows a denserdevice structure than that illustrated in FIG. 12.

The above invention can be formed in an integrated die having underlyingCMOS circuitry, providing a variety of signal conditioningfunctionality, such as first stage amplification of output signals,analog-to-digital conversion, electrostatic discharge (ESD) protection,reset timing and distribution, or a variety of other logic and signalcompensation functions.

Further, the present inventor has recognized, among other things, asingle chip, 3-axis sensor with DSP compensation to map sensor-definedaxes into chip-defined axes. In an example, a 3-axismagneto-resistive-based system (e.g., AMR, giant magnetoresistance(GMR), or tunnel magnetoresistance (TMR), formed of a half- orfull-Wheatstone bridge, etc.) can be built on at least first and secondangled sidewalls of a first trench formed from anisotropic etch or othermethod in or on a substrate surface. A third axis can be formed oneither the substrate surface or the angled sidewall of a second trenchformed at an approximately orthogonal angle to the first trench. Allbridge legs of a given axis can be built on the same sloped sidewall.

In an example structure, the legs of a single-axis sensor can be formedon, for example, the left sidewall of a series of at least two trenches(e.g., four for a full-Wheatstone bridge), the trenches formed from twoangled planes etched or otherwise formed in or on a substrate, while theorthogonal axis legs can be formed on the other (e.g., right in thiscase) sidewall. Interconnect wiring will traverse the edges of thesloped structure, electrically coupling the individual bridge legsformed on each sidewall together in a half- or full-Wheatstone bridge.

For the purposes of signal to noise improvements, multiple strips (e.g.,magneto-resistive material deposited upon the sidewall slopes) can beelectrically coupled in series, parallel, or some combination thereof.An array of such electrically connected strips can then make up anindividual bridge leg. While the two sidewall slopes may not be exactlyorthogonal, depending upon the trench formation method (e.g., 109.4degrees in the case of a KOH anisotropic etch), if the angle is wellknown and consistent from the fabrication process, the angle may becorrected for in a hard-correction algorithm applied to resulting sensorsignals. In an example, sensor response axes can be remapped onto a chipnormal to various edges using signal processing (e.g., on an ASIC).

Variances around the fabrication angle can be further accounted forutilizing measurements taken during final test. A third axis with aprojection onto a mutually orthogonal axis from the two previouslydefined sense axes can lie either on the plane of the substrate or onthe side walls of a trench formed in the substrate that is orthogonal tothe first trench formed in the substrate. Hence, a three-axis sensingsystem can be built, signals from which can be normalized to be mutuallyorthogonal through post-signal processing. Furthermore, the system canbe over-determined by utilizing both angled sidewalls of the secondtrench, and therefore signals can be combined and processed from four ormore axes to improve accuracy.

The above can be formed in an integrated die having underlying CMOScircuitry, providing a variety of signal conditioning functionalityincluding reset drivers, ESD protection, signal conditioning, or evenfull ASIC functionality providing compensated digital output signals toa host microcontroller. Hence, an inexpensive, hardware-DSP-compensatedthree-axis magnetic sensing system can be realized.

In other examples, a reset line can be formed integral to an AMR deviceeither as a series of planar coils or a number of coil segments thatenclose the short axis of the ferromagnetic sense elements from aboveand below. The sense elements can be reset sequentially orco-temporally. The magnetization can be reversed on two of the bridgelegs, in lieu of or in addition to differing barber pole biasdirections, affording an additional degree of symmetry for offsetcancellation. The symmetries thus exploited for multiple measurements ofthe sensor for minimal offset and temperature effects are: barber polebias angle; magnetization direction (e.g., pairs of legs within a bridgein different orientations); current flow direction; and completereversal of the magnetization direction of all the sense elements in agiven bridge. These may be controlled via on-chip or off-chip circuitry,and multiple measurements can be added, averaged, or subtracted from oneanother, depending upon the symmetry directions. Bridge legs can consistof arrays of sense elements, each element reversed sequentially, ifrequired.

Further yet, the present inventor has recognized, among other things, adynamic barber pole angle for an AMR sensor. An AMR bridge can be builtdirectly on a semiconductor substrate where doping profiles and logicare enabled to create high conductivity regions below the ferromagneticsense elements. The high conductivity regions can be reconfigured sothat the preferential current flow angle through the ferromagnetic filmis varied. The ferromagnetic sense element shape can be circular,square, cross, or long with a high aspect ratio and specific end tapersto minimize magnetic domain formation in the ends. In an example, thetapers can take an eye-like shape to a pointed end so the magnetizationat the ends does not abruptly switch between orientations, creatingmagnetization fluxuation noise. As the current flow direction betweentwo contacts is varied, double sampling or phase and amplitude trackingof an output signal may take place for an accurate determination of themagnetic field strength.

For elements of a size greater than a few microns in size, the systemmay also consist of shaped magnetic material with shorting bars, rods orcircles of various geometrical configurations so that the current flowdirection through the device is dependent upon the regions at which abias voltage is applied.

In an example embodiment, current flow may proceed from the upper rightto lower left for one bias configuration, resulting in a particularsensor output which is dependent upon the current flow direction withrespect to the magnetization. For bias applied across a different set ofcontacts, the current may flow from the top to the bottom of the senseelement, resulting in different angular field response. In such a case,two different in-plane responses can be achieved from a single senseelement, for example, an AMR angle sensor operating in saturation modewill provide a signal related to the projection of the total magneticfield along one axes in the first current flow orientation and along anorthogonal axis in the second current flow orientation.

FIGS. 14A-14C illustrate generally example in-plane responses 1401,1402, and 1403. In FIG. 14A, at time 1, the net current direction flowsfrom VDD to VSS, and the signal is proportional to the +X field. In FIG.14B, at time 2, the net current direction flows from VDD to VSS, and thesignal is proportional to the −X field. In FIG. 14C, at time 3, the netcurrent direction flows from VDD to VSS, and the signal is proportionalto the Y field.

Further yet, the present inventor has recognized, among other things, anAMR-based system with enhanced linear range. For example, an AMR-basedsystem can be constructed with the response layer ferromagnetically orantiferromagnetically coupled to another ferromagnetic layer through anon-magnetic-spacer layer, such as ruthenium (Ru), Cu, or one or moreother element that exhibits ferromagnetic or antiferromagnetic exchangecoupling, to enhance the linear range. The resulting system can have alarger linear range, but lower sensitivity. The competing GMR effectscan be reduced by keeping the coupling film very thin (e.g., less than1/10th and preferably less than 1/100th of the thickness of the AMRferromagnetic layer). Additionally a high resistance coupling layer isutilized so that the majority of the current flow is in the thickerferromagnetic AMR layer.

In another embodiment, the AMR film can also be weakly pinned throughcoupling to an amorphous fluoroplastics (AF) material such as PtMn,wherein the weak pinning results from either a thin PtMn thickness orthe presence of a non-magnetic spacer layer between the pinning layerand the ferromagnetic measurement layer. This weak magnetic pinning willalso cause the coupled AMR film to return to a known magneticconfiguration, removing the need for reset lines to return themagnetization to a known magnetic state for lower accuracy measurementneeds, such as where flipping is not required to reduce offset or offsettemperature coefficient as desired for high precision sensingapplications. Hence, the sensor design may be simplified.

A system or apparatus can include, or can optionally be combined withany portion or combination of any portions of any one or more of theexamples or illustrations above to include, means for performing any oneor more of the functions described above, or a machine-readable mediumincluding instructions that, when performed by a machine, cause themachine to perform any one or more of the functions described above.

The above detailed description includes references to the accompanyingdrawings, which form a part of the detailed description. The drawingsshow, by way of illustration, specific embodiments in which theinvention can be practiced. These embodiments are also referred toherein as “examples.” Such examples can include elements in addition tothose shown or described. However, the present inventor alsocontemplates examples in which only those elements shown or describedare provided. Moreover, the present inventor also contemplates examplesusing any combination or permutation of those elements shown ordescribed (or one or more aspects thereof), either with respect to aparticular example (or one or more aspects thereof), or with respect toother examples (or one or more aspects thereof) shown or describedherein.

All publications, patents, and patent documents referred to in thisdocument are incorporated by reference herein in their entirety, asthough individually incorporated by reference. In the event ofinconsistent usages between this document and those documents soincorporated by reference, the usage in the incorporated reference(s)should be considered supplementary to that of this document, forirreconcilable inconsistencies, the usage in this document controls.

In this document, the terms “a” or “an” are used, as is common in patentdocuments, to include one or more than one, independent of any otherinstances or usages of “at least one” or “one or more.” In thisdocument, the term “or” is used to refer to a nonexclusive or, such that“A or B” includes “A but not B,” “B but not A,” and “A and B,” unlessotherwise indicated. In this document, the terms “including” and “inwhich” are used as the plain-English equivalents of the respective terms“comprising” and “wherein.” Also, in the following claims, the terms“including” and “comprising” are open-ended, that is, a system, device,article, or process that includes elements in addition to those listedafter such a term in a claim are still deemed to fall within the scopeof that claim. Moreover, in the following claims, the terms “first,”“second,” and “third,” etc. are used merely as labels, and are notintended to impose numerical requirements on their objects.

Method examples described herein can be machine or computer-implementedat least in part. Some examples can include a computer-readable mediumor machine-readable medium encoded with instructions operable toconfigure an electronic device to perform methods as described in theabove examples. An implementation of such methods can include code, suchas microcode, assembly language code, a higher-level language code, orthe like. Such code can include computer readable instructions forperforming various methods. The code may form portions of computerprogram products. Further, in an example, the code can be tangiblystored on one or more volatile, non-transitory, or non-volatile tangiblecomputer-readable media, such as during execution or at other times.Examples of these tangible computer-readable media can include, but arenot limited to, hard disks, removable magnetic disks, removable opticaldisks (e.g., compact disks and digital video disks), magnetic cassettes,memory cards or sticks, random access memories (RAMs), read onlymemories (ROMs), and the like.

The above description is intended to be illustrative, and notrestrictive. For example, the above-described examples (or one or moreaspects thereof) may be used in combination with each other. Otherembodiments can be used, such as by one of ordinary skill in the artupon reviewing the above description. The Abstract is provided to complywith 37 C.F.R. § 1.72(b), to allow the reader to quickly ascertain thenature of the technical disclosure. It is submitted with theunderstanding that it will not be used to interpret or limit the scopeor meaning of the claims. Also, in the above Detailed Description,various features may be grouped together to streamline the disclosure.This should not be interpreted as intending that an unclaimed disclosedfeature is essential to any claim. Rather, inventive subject matter maylie in less than all features of a particular disclosed embodiment.Thus, the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment, and it is contemplated that such embodiments can be combinedwith each other in various combinations or permutations. The scope ofthe invention should be determined with reference to the appendedclaims, along with the full scope of equivalents to which such claimsare entitled.

What is claimed is:
 1. A system, comprising: a material including asurface; and a magnetic sensor configured to sense a first component anda second component of a magnetic field, the first component of themagnetic field being orthogonal to the second component of the magneticfield, the magnetic sensor including: a first sense element included ona first angled surface sloping in a first direction relative to thesurface of the material, a second sense element included on a secondangled surface sloping in the first direction, and a third angledsurface sloping in a second direction different from the firstdirection, the third angled surface being disposed between the firstangled surface and the second angled surface and excluding a senseelement.
 2. The system of claim 1, wherein the first sense element ofthe magnetic sensor is aligned parallel to the second sense element ofthe magnetic sensor.
 3. The system of claim 1, wherein the magneticsensor is a first magnetic sensor, the system further comprising: asecond magnetic sensor configured to sense the first component and thesecond component of the magnetic field, the second magnetic sensorincluding a first sense element and a second sense element, the firstsense element of the second magnetic sensor being aligned parallel tothe second sense element of the second magnetic sensor, the first senseelement of the second magnetic sensor and the second sense element ofthe second magnetic sensor each being included on alternating angledsurfaces that are each sloped with respect to the surface of thematerial.
 4. The system of claim 1, wherein the magnetic sensor is afirst magnetic sensor, the system further comprising: a second magneticsensor configured to sense the second component and a third component ofthe magnetic field, the second component of the magnetic field beingorthogonal to the third component of the magnetic field, the secondmagnetic sensor including a sense element included on an angled surfacesloped with respect to the surface of the material, and the senseelement of the second magnetic sensor being aligned orthogonal to thefirst sense element of the first magnetic sensor.
 5. The system of claim1, further comprising: a reset line having a longitudinal axis alignedparallel to the first sense element of the magnetic sensor.
 6. Thesystem of claim 1, wherein the first angled surface, the second angledsurface and the third angled surface are adjacent to each other andcontinuously formed.
 7. A system comprising: a magnetic sensorconfigured to sense a first component and a second component of amagnetic field, the first component of the magnetic field beingorthogonal to the second component of the magnetic field, the magneticsensor including: a plurality of sense elements, and a plurality ofangled surfaces, a number of the plurality of sense elements being lessthan a number of the plurality of angled surfaces.
 8. The system ofclaim 7, wherein the magnetic sensor is a first magnetic sensor, thesystem further comprising: a second magnetic sensor configured to sensethe first component and a third component of the magnetic field, thesecond component of the magnetic field being orthogonal to the thirdcomponent of the magnetic field.
 9. The system of claim 7, wherein theplurality of sense elements includes only two sense elements and theplurality of angled surfaces includes more than two angled surfaces. 10.The system of claim 7, wherein a first angled surface from the pluralityof angled surfaces is sloping in a first direction and a second angledsurface from the plurality of angled surfaces is sloping in a seconddirection different from the first direction, the first angled surfacebeing adjacent to the second angled surface, the plurality of senseelements including a sense element included on the first angled surface,and the second angled surface excluding a sense element.
 11. The systemof claim 7, wherein the plurality of angled surfaces includes a firstangled surface, a second angled surface, a third angled surface, and afourth angled surface, the first angled surface and the third angledsurface sloping in a first direction, and the second angled surface andthe fourth angled surface sloping in a second direction different fromthe first direction, the second angled surface being disposed betweenthe first angled surface and the third angled surface, the plurality ofsense elements including a first sense element included on the firstangled surface, and the plurality of sense elements including a secondsense element included on the third angled surface.
 12. The system ofclaim 7, wherein the plurality of sense elements includes sense elementsformed on alternating angled surfaces from the plurality of angledsurfaces.
 13. The system of claim 7, further comprising: a reset linehaving a longitudinal axis aligned parallel to the plurality of senseelements of the magnetic sensor.
 14. The system of claim 7, wherein themagnetic sensor is a first magnetic sensor, the system furthercomprising: a second magnetic sensor including a first sense element anda second sense element, the first sense element of the second magneticsensor being aligned parallel to the second sense element of the secondmagnetic sensor, to the first sense element of the second magneticsensor and to the second sense element of the second magnetic sensor.15. A system, comprising: a material including a surface; and a magneticsensor configured to sense a first component and a second component of amagnetic field, the first component of the magnetic field beingorthogonal to the second component of the magnetic field, the magneticsensor including: a first sense element, and a second sense element, thefirst sense element of the magnetic sensor and the second sense elementof the magnetic sensor each being included on alternating angledsurfaces that are each sloped with respect to the surface of thematerial.
 16. The system of claim 15, wherein the magnetic sensor is afirst magnetic sensor, the system further comprising: a second magneticsensor configured to sense the first component and the second componentof the magnetic field, the second magnetic sensor including a firstsense element and a second sense element, the first sense element of thesecond magnetic sensor being aligned parallel to the second senseelement of the second magnetic sensor, and the first sense element ofthe second magnetic sensor and the second sense element of the secondmagnetic sensor each being included on alternating angled surfaces thatare each sloped with respect to the surface of the material.
 17. Thesystem of claim 16, further comprising: a third magnetic sensor, thethird magnetic sensor configured to sense the second component and athird component of the magnetic field, the second component of themagnetic field being orthogonal to the third component of the magneticfield, the third magnetic sensor including a sense element included onan angled surface sloped with respect to the surface of the material,and the sense element of the third magnetic sensor being alignedorthogonal to at least one of the first sense element and the secondsense element of the first magnetic sensor or the first sense elementand the second sense element of the second magnetic sensor.
 18. Thesystem of claim 15, wherein the angled surfaces include a first angledsurface, a second angled surface and a third angled surface beingadjacent to each other and continuously formed, the first angled surfacesloping in a first direction relative to the surface of the material,the second angled surface sloping in a second direction relative to thesurface of the material, the second direction being different than thefirst direction, and the third angled surface sloping in the firstdirection, the second angled surface being disposed between the firstangled surface and the third angled surface and excluding a senseelement.
 19. The system of claim 18, wherein the first sense element ofthe magnetic sensor is on the first angled surface, and the second senseelement of the magnetic sensor is on the third angled surface.
 20. Thesystem of claim 15, wherein the first sense element of the magneticsensor is aligned parallel to the second sense element of the magneticsensor.